Academic Staff

Semiconductor processing; Device physics, modeling and simulation; Integrated sensors.

Prof. Lai's Ph.D. research at the University of Hong Kong was related to the design of small-sized MOS transistor with emphasis on narrow-channel effects. The work involved the development of both analytical and numerical models. Worked as a Post-doctoral fellow : i) proposed and implemented a novel self-aligned structure for bipolar transistor, ii) designed and implemented an advanced poly-emitter bipolar process with emphasis on self-alignment and trench isolation.

His current research interests are on thin gate dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based on Si, SiC, GaN, Ge, organics, and on microsensors for detecting gases, heat, light, and flow.

• J.P. Xu, P.T. Lai, and Y.C. Cheng, “Dynamic-stress-induced enhanced
  degradation of 1/f noise in n-MOSFET’s", IEEE Trans. Electron Devices, vol.
  ED-47, pp. 109-112, Jan 2000.
  
  
• J.P. Xu, P.T. Lai, C.L. Chan and Y.C. Cheng, “Improved Performance and
  Reliability of N2O-Grown Oxynitride on 6H-SiC ", IEEE Electron Device
  Letters, Vol. 21, pp. 298-300, Jun 2000.
  
  
• P.T. Lai, J.P. Xu and C. L. Chan, “Effects of Wet N2O Oxidation on
  Interface Properties of 6H-SiC MOS Capacitors”, IEEE Electron Device
  Letters, Vol. 23, pp. 410-412, July 2002.
  
  
• J.P. Xu, P.T. Lai, D.G. Zhong and C. L. Chan, “Improved
  hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown
  oxynitride as gate insulator”, IEEE Electron Device Letters, Vol. 24, pp.
  13-15, Jan 2003.
  
  
• J.P. Xu, P.T. Lai, C.X. Li, X. Zou, C.L. Chan, “Improved Electrical
  Properties of Germanium MOS Capacitors with Gate Dielectric Grown in Wet NO
  Ambient”, IEEE Electron Device Letters, Vol. 27, pp. 439-441, Jun 2006.
  
  
• W.M. Tang, P.T. Lai, C.H. Leung and J.P. Xu, “A comparison of MISiC
  Schottky-diode hydrogen sensors made by NO, N2O or NH3 nitridations", IEEE
  Trans. Electron Devices, vol. ED-53, pp. 2378-2383, Sep 2006.
  
  
• X.F. Zhang, J.P. Xu, P.T. Lai, C.X. Li, “A Physical Model on Scattering
  at High-k Dielectric/SiO2 Interface of SiGe p-MOSFETs”, IEEE Trans.
  Electron Devices, vol. ED-54, pp. 3097-3102, Nov 2007.
  
  
• J. P. Xu, X. F. Zhang, C. X. Li, P. T. Lai, , C. L. Chan, “Improved
  Electrical Properties of Ge p-MOSFET with HfO2 Gate Dielectric by using
  TaOxNy Interlayer”, IEEE Electron Device Letters, Vol. 29, pp. 1155-1158 ,
  Oct 2008.
  
  
• Y. R. Liu, L. F. Deng, R. H. Yao, and P. T. Lai, "Low-Operating-Voltage
  Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium
  Oxide as the Gate Dielectric", IEEE Trans. on Device And Materials
  Reliability, vol. 10, Feb 2010
  
  
• Y. R. Liu, P. T. Lai, R. H. Yao and L. F. Deng, " Influence of
  Octadecyltrichlorosilane Surface Modification on Electrical Properties of
  Polymer Thin-Film Transistors Studied by Capacitance–Voltage Analysis ",
  IEEE Trans. on Device And Materials Reliability, vol. 11, pp. 60-65, Mar
  2011
  
  
• L.F. Deng, P.T. Lai, W. B. Chen, J. P. Xu, Y. R. Liu, H. W. Choi, and C.
  M. Che, “Effects of Different Annealing Gases on Pentacene OTFT with HfLaO
  Gate Dielectric”, IEEE Electron Device Letters, vol. 32, pp. 93-95, Jan
  2011
  
  
• F. Ji, J. P. Xu, P. T. Lai, Senior Member, IEEE, C. X. Li, and J. G. Liu,
  "Improved Interfacial Properties of Ge MOS Capacitor with High-k Dielectric
  by using TaON/GeON Dual Interlayer", IEEE Electron Device Letters, vol. 32,
  pp. 122-124, Feb 2011