RPG Seminar – Effects of Gate-Electrode Doping Concentration on Remote Phonon Scattering in InGaZnO Thin-Film Transistors
Date:
08 Dec, 2020 (Tue)
Time:
4:00 pm
Webinar Link:
https://hku.zoom.us/j/97708728493?pwd=ODU0b1pHN1NaWllEU29YZG5wT0t6UT09
Meeting ID: 977 0872 8493
Password: 123456

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Speaker

Miss Hui Su
Department of Electrical and Electronic Engineering
The University of Hong Kong

Abstract

With the rapid developments of advanced semiconductor electronics, silicon dioxide, which is the traditional material as the gate insulator of the CMOS technology, cannot satisfy the requirements anymore. As a solution, the adoption of high-dielectric-constant (high-k) materials as the gate insulator has drawn much attention in recent years, and Intel has already integrated high-k materials into its MOSFET structures. However, it has been found that high-k materials can introduce strong remote phonon scattering on channel carries due to the severe thermal vibration of their atoms, and consequently degrade the device performances.  Moreover, it has been demonstrated that the free electrons in metal gate electrodes can suppress the remote phonon scattering by the effect of image force (so-called screening effect). We study the influence of gate-electrode doping concentration on the remote phonon scattering in InGaZnO thin-film transistors. Results show that both the electrons in the n-Si gate electrode and the holes in the p-Si gate electrode have a screening effect on the remote phonon scattering. Moreover, higher gate doping concentration shows a stronger screening effect due to more gate-electrode plasmons coupling with the phonons in the gate insulator.

Biography of the speaker:

Hui SU received the Bachelor’s degree in Microelectronics from the Nanjing University of Science and Technology in 2016 and the Master’s degree in Electronics from The University of Edinburgh in 2017. She is currently pursuing a PhD degree in Electrical and Electronics Engineering at The University of Hong Kong. Her main research area is related to semiconductor device processing and high-k materials.


Organizer

Prof. P.T. Lai

Most seminars are open to the general public, free of charge, unless otherwise stated. Registration is not required. Arrangement for car parking facilities on campus please contact us for details.

For enquiries, please contact:
Department of Electrical and Electronic Engineering,
Room 601, Chow Yei Ching Building,
Pokfulam Road, Hong Kong
Tel: (852) 3917 7093
Email: seminar@eee.hku.hk