08 Dec, 2020 (Tue)Time:
4:00 pmWebinar Link:
Meeting ID: 977 0872 8493
SpeakerMiss Hui Su
Department of Electrical and Electronic Engineering
The University of Hong Kong
With the rapid developments of advanced semiconductor electronics, silicon dioxide, which is the traditional material as the gate insulator of the CMOS technology, cannot satisfy the requirements anymore. As a solution, the adoption of high-dielectric-constant (high-k) materials as the gate insulator has drawn much attention in recent years, and Intel has already integrated high-k materials into its MOSFET structures. However, it has been found that high-k materials can introduce strong remote phonon scattering on channel carries due to the severe thermal vibration of their atoms, and consequently degrade the device performances. Moreover, it has been demonstrated that the free electrons in metal gate electrodes can suppress the remote phonon scattering by the effect of image force (so-called screening effect). We study the influence of gate-electrode doping concentration on the remote phonon scattering in InGaZnO thin-film transistors. Results show that both the electrons in the n-Si gate electrode and the holes in the p-Si gate electrode have a screening effect on the remote phonon scattering. Moreover, higher gate doping concentration shows a stronger screening effect due to more gate-electrode plasmons coupling with the phonons in the gate insulator.
Biography of the speaker:
Hui SU received the Bachelor’s degree in Microelectronics from the Nanjing University of Science and Technology in 2016 and the Master’s degree in Electronics from The University of Edinburgh in 2017. She is currently pursuing a PhD degree in Electrical and Electronics Engineering at The University of Hong Kong. Her main research area is related to semiconductor device processing and high-k materials.
OrganizerProf. P.T. Lai
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