A Reliability Study on Green InGaN–GaN Light-Emitting Diodes

– ZL Li, PT Lai, and HW Choi

20×20 mm AFM surface scans of InGaN–GaN LED wafers with emission wavelengths of (a) 520-, (b) 540-, and (c) 550-nm.

IEEE Photonics Technology Letters, vol. 21, 19, pp. 1429-1431 (2009)

In this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various device parameters, including leakage current, 1/f noise, and degradation rate. It was found that as the wavelength of green LEDs increases from 520 to 550 nm by increasing the indium content in the quantum wells, the defect density also increases, thus leading to larger leakage current, enhanced noise magnitude, and shortened device lifetime.

DOI: 10.110.1109/LPT.2009.2028155