High-resolution 128 x 96 nitride microdisplay
– HW Choi, C Liu, E Gu, G McConnell, JM Girkin, IM Watson, and MD Dawson
IEEE Electron Device Letters, vol. 25, 5, pp. 277-279 (2004)
Matrix-addressable arrays of InGaN micro-light-emitting diodes with 128 × 96 pixels and a resolution of 1200 dpi have been fabricated using a novel “sloped sidewall” process. The devices have been fabricated on InGaN blue and green wafers, emitting light at the wavelengths of 468 and 508 nm, respectively. A simple circuit, which enables the display of an arrow pattern with ~60% of the pixels turned on, was used for device testing. At an injection current of 60 mA, the devices deliver 3.3 (blue) and 2.4 mW (green) of output power, corresponding to a luminance of more than 30 000 Cd/m2. These high-brightness and highly versatile devices are certainly an attractive form of emissive micro-display.
