– HW Choi, WY Fu, and H Lyu Compound Semiconductor, vol. 25, 5, pp. 18 (2019) Patterning epiwafers with indium-rich InGaN quantum wells enables the…
– HW Choi, WY Fu, KH Li and YF Cheung Compound Semiconductor, vol. 24, 2, pp. 54-57 (2018) GaN produces great LEDs, lasers and transistors.…
– HW Choi, KH Li, and YF Cheung Publication Date: 2020 Patent Office: US Patent Number: US 10,615,222 Methods of fabricating flexible, free-standing LED structures…
– HW Choi, KH Li, and H Lu Publication Date: 2019 Patent Office: US Patent Number: US Patent Application 2019/0157508 A device includes a light-emitting…
– HW Choi Publication Date: 2016 Patent Office: US Patent Number: US 9,401,453 A nano-LED containing an array of nano-pillars of different diameters that are…
– WY Fu, and HW Choi Journal of Physics D: Applied Physics, vol. 55, 1, pp. 015101 (2021) An light-emitting bipolar transistor (LEBJT) has been…
– KH Li, WY Fu, and HW Choi Progress in Quantum Electronics, vol. 70, pp. 100247 (2020) Blue LEDs and HEMTs based on III-Nitride have…
– WY Fu, and HW Choi ACS Applied Nano Materials, vol. 4, 1, pp. 666-672 (2021) While spectral blue-shifting caused by nanostructuring of InGaN/GaN quantum…
– KH Li, YF Cheung, W Jin, WY Fu, ATL Lee, SC Tan, SY Hui, and HW Choi IEEE Transactions on Industrial Electronics, vol. 67,…
– KH Li, H Lu, WY Fu, YF Cheung, and HW Choi IEEE Transactions on Industrial Electronics, vol. 66, 9, pp. 7426-7432 (2019) To overcome…